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PD - 94319B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515 -8.0A IRHY593230CM 300K Rads (Si) 0.515 -8.0A
IRHY597230CM 200V, P-CHANNEL
4#
TECHNOLOGY
c
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
T0-257AA
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -8.0 -5.0 -32 75 0.6 20 80 -8.0 7.5 -12 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in/1.6mm from case for 10s ) 4.3 ( Typical )
g
For footnotes refer to the last page
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1
01/30/03
IRHY597230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-200 -- -- -2.0 5.1 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.515 -4.0 -- -10 -25 -100 100 40 12 15 25 30 50 105 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -5.0A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -5.0A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -8.0A VDS = -100V VDD = -100V, ID = -8.0A, VGS =-12V, RG = 7.5,
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1340 190 20
-- -- --
pF
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -8.0 -32 -5.0 200 1.2
Test Conditions
A
V ns C Tj = 25C, IS = -8.0A, VGS = 0V Tj = 25C, IF =-8.0A, di/dt -100A/s VDD -25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 1.67 80
Units
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHY597230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage 100K Rads(Si)1 Min Max -200 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.505 0.515 -5.0 300KRads(Si)2 Min Max -200 -2.0 -- -- -- -- -- -- -- -5.0 -100 100 -10 0.505 0.515 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS =-160V, VGS =0V VGS = -12V, ID =-5.0A VGS = -12V, I D =-5.0A VGS = 0V, IS = -8.0A
1. Part number IRHY597230CM 2. Part number IRHY593230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 200 - 200 - 200 - 200 -75 32.7 - 200 - 200 - 200 - 50 -- 28.5 - 200 - 200 - 200 - 35 --
-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY597230CM
Pre-Irradiation
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-5.0V
1
1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -8A
-I D, Drain-to-Source Current (A)
2.0
1.5
TJ = 25 C TJ = 150 C
1.0
0.5
10 5.0
15
V DS = -50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHY597230CM
2000
1600
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -8.0A
VDS =-100V
16
C, Capacitance (pF)
Ciss
1200
12
800
8
C oss
400
4
C rss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY R DS (on)
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
10
10
TJ = 150 C TJ = 25 C
1
100s
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
1ms
10ms
0.1 1.0
V GS = 0 V
2.0 3.0 4.0 5.0 6.0
-VSD ,Source-to-Drain Voltage (V)
1000
-V DS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY597230CM
Pre-Irradiation
8.0
VDS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
VGS
4.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on) tr t d(off) tf
VGS 10%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
6.0
RG
V DD
Pre-Irradiation
IRHY597230CM
VDS
L
160
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T IA S D R IV E R
0 .0 1
+
VD D V DD A
120
ID -3.6A -5.1A BOTTOM -8.0A TOP
VGS -2 0 V
tp
80
15V
40
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
-12V 12V
.2F .3F
-12 V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHY597230CM
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -50V, starting TJ = 25C, L=2.5 mH Peak IL = -8.0A, VGS = -12V ISD -8.0A, di/dt -340A/s, VDD -200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527]
16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X 3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4. DIME NS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
P IN AS S IGN ME N T S
1 = GATE 2 = DRAIN 3 = S OURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/03
8
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